On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature
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Effects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C
Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...
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